ZXMP3F36N8 30v so8 p-channel enhancement mode mosfet summary v (br)dss (v) r ds(on) ( ? ) i d (a) 0.020 @ v gs =-10v -12.6 -30 0.028 @ v gs =-4.5v description this new generation trench mosfet from zetex has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance. features ? low on-resistance ? so8 package applications ? battery protection ? battery disconnect ? power management functions ordering information device reel size (inches) tape width (mm) quantity per reel ZXMP3F36N8ta 7 12 500 device marking d s s s g top view d d d zxmp 3f36 issue 1 - august 2008 1 ? diodes incorporated 2008 www.zetex.com www.diodes.com discontinued
ZXMP3F36N8 absolute maximum ratings parameter symbol limit unit drain-source voltage v dss -30 v gate-source voltage v gs 20 v continuous drain current @ v gs = -10v; t a =25 c (b) @ v gs = -10v; t a =70 c (b) @ v gs = -10v; t a =25 c (a) @ v gs = -10v; t l =25 c (d) i d -9.6 -7.7 -7.2 -12.6 v pulsed drain current (c) i dm -45 a continuous source current (body diode) (b) i s -4.7 a pulsed source current (body diode) (c) i sm -45 a power dissipation at t a =25 c (a) linear derating factor p d 1.56 12.5 w mw/ c power dissipation at t a =25 c (b) linear derating factor p d 2.8 22.2 w mw/ c power dissipation at t l =25 c (d) linear derating factor p d 4.7 37.9 w mw/ c operating and storage temperature range t j , t stg -55 to 150 c thermal resistance parameter symbol value unit junction to ambient (a) r ja 80 c/w junction to ambient (b) r ja 45 c/w junction to lead (d) r jl 26.4 c/w notes: (a) for a device surface mounted on 25mm x 25mm x 1.6mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions. (b) mounted on fr4 pcb measured at t 10 sec. (c) repetitive rating on 25mm x 25mm fr4 pcb, d=0.02, pulse width 300us ? pulse width limited by maximum junction temperature. (d) thermal resistance from junction to sol der-point (at the end of the drain lead). issue 1 - august 2008 2 ? diodes incorporated 2008 www.zetex.com www.diodes.com discontinued
ZXMP3F36N8 thermal characteristics 100m 1 10 1m 10m 100m 1 10 100 single pulse t amb =25c r ds(on) limited 100s 1ms 10ms 100ms 1s dc safe operating area -i d drain current (a) -v ds drain-source voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25mm x 25mm 1oz fr4 derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 10 20 30 40 50 60 70 80 t amb =25c transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 single pulse t amb =25c pulse power dissipation pulse width (s) maximum power (w) issue 1 - august 2008 3 ? diodes incorporated 2008 www.zetex.com www.diodes.com discontinued
ZXMP3F36N8 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions static drain-source breakdown voltage v (br)dss -30 v i d = -250 a, v gs =0v zero gate voltage drain current i dss -1.0 a v ds =-30v, v gs =0v gate-body leakage i gss 100 na v gs = 20v, v ds =0v gate-source threshold voltage v gs(th) -1.3 -2.5 v i d = -250 a, v ds =v gs static drain-source on-state resistance ( * ) r ds(on) 0.020 0.028 ? v gs = -10v, i d = -10a v gs = -4.5v, i d = -8.0a forward transconductance ( * ) (?) g fs 29 s v ds = -15v, i d = -10a dynamic (?) input capacitance c iss 2265 pf output capacitance c oss 424 pf reverse transfer capacitance c rss 266 pf v ds = -15v, v gs =0v f=1mhz switching (?) (?) turn-on-delay time t d(on) 3.1 ns rise time t r 5 ns turn-off delay time t d(off) 75 ns fall time t f 40 ns v dd = -15v, v gs = -10v i d = -1a r g ? 6.0 , gate charge total gate charge q g 43.9 nc gate-source charge q gs 6 nc gate-drain charge q gd 9.8 nc v ds = -15v, v gs = -10v i d = -10a source?drain diode diode forward voltage ( * ) v sd -0.73 -1.2 v i s = -1.7a,v gs =0v reverse recovery time (?) t rr 17.7 ns reverse recovery charge (?) q rr 11.7 nc i s = -2.9a,di/dt=100a/ s notes: (*) measured under puls ed conditions. pulse width 300 s; duty cycle 2%. (?)switching characteristics are independent of operating junction temperature. (?)for design aid only, not subject to production testing issue 1 - august 2008 4 ? diodes incorporated 2008 www.zetex.com www.diodes.com discontinued
ZXMP3F36N8 typical characteristics 0.1 1 10 1e-3 0.01 0.1 1 10 0.1 1 10 0.1 1 10 23 0.1 1 10 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 0.01 0.1 1 10 0.20.40.60.81.0 1e-3 0.01 0.1 1 10 2.5v 10v 3.5v 2v output characteristics t = 25c 3v v gs -i d drain current (a) -v ds drain-source voltage (v) 10v 2.5v 2v 3.5v 3v output characteristics t = 150c v gs -i d drain current (a) -v ds drain-source voltage (v) typical transfer characteristics v ds = 10v t = 25c t = 150c -i d drain current (a) -v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = 10v i d = 10a v gs(th) v gs = v ds i d = 250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 2.5v 10v 3.5v 4.5v 3v on-resistance v drain current t = 25c v gs r ds(on) drain-source on-resistance ( ) -i d drain current (a) vgs = 0v t = 150c t = 25c source-drain diode forward voltage -v sd source-drain voltage (v) -i sd reverse drain current (a) issue 1 - august 2008 5 ? diodes incorporated 2008 www.zetex.com www.diodes.com discontinued
ZXMP3F36N8 typical characteristics 11 0 0 500 1000 1500 2000 2500 3000 c rss c oss c iss v gs = 0v f = 1mhz c capacitance (pf) -v ds - drain - source voltage (v) 0 5 10 15 20 25 30 35 40 45 0 1 2 3 4 5 6 7 8 9 10 i d = 10a v ds = 15v gate-source voltage v gate charge capacitance v drain-source voltage q - charge (nc) -v gs gate-source voltage (v) test circuits issue 1 - august 2008 6 ? diodes incorporated 2008 www.zetex.com www.diodes.com discontinued
ZXMP3F36N8 package outline so8 so8 package in formation inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.053 0.069 1.35 1.75 e 0.050 bsc 1.27 bsc a1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 d 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 h 0.228 0.244 5.80 6.20 u 0 8 0 8 e 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 l 0.016 0.050 0.40 1.27 - - - - - note: controlling dimensions are in inches. approximate dimensions are provided in millimeters issue 1 - august 2008 7 ? diodes incorporated 2008 www.zetex.com www.diodes.com discontinued
ZXMP3F36N8 definitions product change diodes incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any p roduct or service. customers are solely responsible for obtaining the latest relevant information before placing orders. applications disclaimer the circuits in this design/application note ar e offered as design ideas. it is the res ponsibility of the user to ensure that t he circuit is fit for the user?s application and meets with the user?s requirements. no representation or warr anty is given and no liability whatsoever i s assumed by diodes incorporated with respect to the accu racy or use of such information, or infr ingement of patents or other intellectual p roperty rights arising from such use or otherwise. diodes incorpor ated does not assume any legal responsibili ty or will not be held legally liable (wh ether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract , opportunity or consequential loss in the use of these circ uit applications, under any circumstances. life support diodes inc. products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably ex pected to result in signif icant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expecte d to cause the failure of the life support device or to affect its safe ty or effectiveness. reproduction the product specifications contained in th is publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. terms and conditions all products are sold subjects to diodes inc. terms and conditions of sale, and this disclaimer (save in the event of a conflic t between the two when the terms of the contract shall prevail) according to region, supplied at the ti me of order acknowledgement. for the latest information on technology, delivery terms and conditions and prices, please contact your nearest zetex sales off ice. quality of product diodes zetex semiconductors limit ed is an iso 9001 and ts16949 certified semiconductor manufacturer. to ensure quality of service and products we strongly advise the purchase of parts directly from diodes incorporated or one of our regionally authorized distributors. for a complete listing of authorized distributors please visit: www.zetex.com or www.diodes.com diodes incorporated does not warrant or accept any liability what soever in respect of any parts purchased through unauthorized sales channels. esd (electrostatic discharge) semiconductor devices are susceptible to damage by esd. suitable precautions should be taken when handling and transporting dev ices. the possible damage to devices depends on the circum stances of the handling and transporting, and the nature of the device. the ext ent of damage can vary from immediate functional or parametric malfunction to de gradation of function or performance in use over time. device s suspected of being affected should be replaced. green compliance diodes zetex semiconductors is committed to environmental excelle nce in all aspects of its operat ions which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. numerous successful programs have been implemented to reduce the use of hazardous substanc es and/or emissions. all zetex components are compliant with the rohs directive, and through this it is s upporting its customers in their compliance with weee and elv directives. product status key: ?preview? future device intended for production at some point. samples may be available ?active? product status recommended for new designs ?last time buy (ltb)? device will be discontinued and last time buy period and delivery is in effect ?not recommended for new designs? device is still in production to support existing designs and production ?obsolete? production has been discontinued datasheet status key: ?draft version? this term denotes a very early dat asheet version and contains highly provisional information, which may change in any manner without notice. ?provisional version? this term denotes a pre-release datasheet. it provides a clear indication of anticipated performance. however, changes to the test conditions and specificat ions may occur, at any time and without notice. ?issue? this term denotes an issued datasheet contai ning finalized specifications. however, changes to specifications may occur, at any time and without notice. diodes zetex sales offices europe zetex gmbh kustermann-park balanstra?e 59 d-81541 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific diodes zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters diodes incorporated 15660 n. dallas parkway suite 850 dallas, tx75248, usa www.diodes.com ? 2008 published by diodes incorporated issue 1 - august 2008 8 ? diodes incorporated 2008 www.zetex.com www.diodes.com discontinued
|
